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Discontinued (Discontinued) IN2272 Indium Phosphide Wafer

Catalog No. IN2272
Material InP
Thickness 350 um - 625 um
Diameter Ø 2" Ø 3" Ø 4"

Stanford Advanced Materials (SAM) provides a wide range of compound wafer including GaAs wafer, GaP wafer, GaSb wafer, InAs wafer, and InP wafer.

Related products: Gallium Nitride Wafer, Gallium Arsenide Wafer, Germanium Wafer (Ge wafer), Gallium Phosphide Wafer, Indium Arsenide Wafer.

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Indium Phosphide Wafer
Indium Phosphide Wafer
Description
Specification
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This Item
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Material
InP
Thickness
350 um - 625 um
Diameter
Ø 2" Ø 3" Ø 4"
 
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Material
90% In2O3+10% SnO2 / 95% In2O3+5% SnO2
Purity
>=99.99%
Density
7.1g/cm3
 
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Material
Indium Iron Oxide (InFe2O4)
Purity
99.9%%
Shape
Powder/ Granule/ Custom-made
 
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Material
Indium Oxide (In2O3)
Purity
99.9% ~ 99.99%
Shape
Powder/ Granule/ Custom-made

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