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Discontinued (Discontinued) GA2171 Gallium Arsenide Wafer (GaAs)

Catalog No. GA2171
Material GaAs
Thickness 350 um ~ 625 um
Diameter Ø 2" / Ø 3" / Ø 4"

Stanford Advanced Materials (SAM) offer single crystal GaAs wafer produced by two main growth techniques LEC and VGF method, allowing us to provide customers the widest choice of GaAs material with high uniformity of electrical properties and excellent surface quality.

Related products: Gallium Nitride Wafer, Sapphire Wafer, Silicon Carbide Wafer, Silicon Wafer, Germanium Wafer (Ge wafer).

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GA2171 Gallium Arsenide Wafer
GA2171 Gallium Arsenide Wafer
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Material
GaAs
Thickness
350 um ~ 625 um
Diameter
Ø 2" / Ø 3" / Ø 4"
 
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Material
Copper Gallium (Cu/Ga)
Purity
99.9% ~ 99.999%
Shape
Powder/ Granule/ Custom-made
 
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Purity
≥99.99%
CAS Number
69365-72-6
Appearance
Crystal
Chemical Formula
Ga(NO3)3 · xH2O
 
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CAS Number
12024-22-5
Appearance
Yellow Solid
Melting Point
1090~1255°C
Chemical Formula
Ga2S3

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