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Discontinued (Discontinued) NR2172 Gallium Nitride Wafer

Catalog No. NR2172
Material GaN
Thickness 300-450um
Diameter Ø 2" / Ø 4" /Ø 6"
Electrical Resistance (µOhm-cm) < 0.5 Ω·cm

Stanford Advanced Materials (SAM) produces any diameters in order to provide the most flexibility as possible. With the aim of providing the largest range of specifications, we work either undoped or doped gallium nitride wafers.

Related products: Gallium Arsenide Wafer, Sapphire Wafer, Silicon Carbide Wafer, Silicon Wafer, Germanium Wafer (Ge wafer).

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NR2172 Gallium Nitride Wafer
NR2172 Gallium Nitride Wafer
Description
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This Item
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Material
GaN
Thickness
300-450um
Diameter
Ø 2" / Ø 4" /Ø 6"
Electrical Resistance (µOhm-cm)
< 0.5 Ω·cm
 
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Purity
99.9%
CAS Number
12039-79-1
Molecular Weight
237.12
Density
9.14 g/cm3
 
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CAS Number
12033-89-5
Chemical Formula
Si3N4
Particle Size
Customized
Appearance
Grayish-white powder
Purity
≥99%
Synonyms
Silicon Nitride Powder, Si3N4 Powder
 
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CAS Number
12033-89-5
APS
~100 nm
Form
Grayish-white powder
Purity
99.9%
Synonyms
Nano Silicon Nitride Powder, Si3N4 Nanopowder

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