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CY2173 Sapphire Wafer

Catalog No. CY2173
Material Al2O3
Thickness 0.35-1 mm, or customized
Diameter Ø 1-8", or customized
Form Wafer
Purity ≥99.999%
Synonyms Sapphire Wafer, Al2O3 Wafer

Stanford Advanced Materials (SAM) supplies high-quality sapphire wafers (Al2O3) for optoelectronics, GaN epitaxy, high-frequency devices, and advanced semiconductor applications. Our wafers are available in diameters from 1" to 12" with customized orientations (C-plane, A-plane, R-plane, M-plane).

Related products: Gallium Nitride Wafer, Silicon Carbide Wafer, Silicon Wafer

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Material
Al2O3
Thickness
0.35-1 mm, or customized
Diameter
Ø 1-8", or customized
Form
Wafer
Purity
≥99.999%
Synonyms
Sapphire Wafer, Al2O3 Wafer
 
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Material
AlN, aluminum nitride
Density
3.26 g/cm3
Appearance
White, Light Grey
Shape
Substrate
Melting Point
>2200°C
Thermal Conductivity
>170 W/(m·K)
Synonyms
Aluminum Nitride Substrates, AlN Substrates
 
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Material
SiC
Thickness
260 um to 500 um, or customized
Diameter
Ø 1"-12", or customized
Form
Wafer
Synonyms
Silicon Carbide Wafer, SiC Wafer
 
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Material
Alumina
Purity
95%, 96%, 97%, 98%, 99%, 99.5%, 99.7%,
Thickness
Customized
Synonyms
Polished Al2O3 Substrate, Polished Aluminum Oxide Substrate

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